datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Integrated Device Technology  >>> IDT71V256SA12YG8 PDF

IDT71V256SA12YG8 数据手册 ( 数据表 ) - Integrated Device Technology

IDT71V256SA04 image

零件编号
IDT71V256SA12YG8

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
469.3 kB

生产厂家
IDT
Integrated Device Technology IDT

Description
The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. The IDT71V256SA has outstanding low power characteristics while at the same time maintaining very high performance. Address access
times of as fast as 10ns are ideal for 3.3V secondary cache in 3.3V desktop designs.


FEATUREs
◆ Ideal for high-performance processor secondary cache
◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options
◆ Fast access times:
– Commercial and Industrial: 10/12/15/20ns
◆ Low standby current (maximum):
– 2mA full standby
◆ Small packages for space-efficient layouts:
– 28-pin 300 mil SOJ
– 28-pin TSOP Type I
◆ Produced with advanced high-performance CMOS technology
◆ Inputs and outputs are LVTTL-compatible
◆ Single 3.3V(±0.3V) power supply

Page Link's: 1  2  3  4  5  6  7  8 

零件编号
产品描述 (功能)
PDF
生产厂家
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)
Integrated Device Technology
3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT)
Integrated Device Technology
32K X 8 BIT CMOS SRAM
AMIC Technology
32K X 8 BIT CMOS SRAM
AMIC Technology
32K X 8 BIT CMOS SRAM
AMIC Technology
256K-BIT [32K x 8] CMOS EPROM
Macronix International
256K-bit CMOS EPROM (32K x 8)
Philips Electronics
32K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc
32K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
32K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]