Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thin-wafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

FEATUREs
• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 44 mA2) 3)
• Optimized for high temperature operation

Benefits
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

APPLICATIONs
• Switch mode power supply
• Power factor correction
• Solar inverter
• Uninterruptible power supply