IGB50N60T 数据手册 ( 数据表 ) - Infineon Technologies
零件编号
IGB50N60T
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Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/
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