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IHW25N120R2 数据手册 ( 数据表 ) - Infineon Technologies

IHW25N120R2 image

零件编号
IHW25N120R2

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page
12 Pages

File Size
395.2 kB

生产厂家
Infineon
Infineon Technologies Infineon

Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
   positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications


零件编号
产品描述 (功能)
PDF
生产厂家
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies

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