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IHW30N110R3 数据手册 ( 数据表 ) - Infineon Technologies

IHW30N110R3 image

零件编号
IHW30N110R3

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page
15 Pages

File Size
1.7 MB

生产厂家
Infineon
Infineon Technologies Infineon

Features:
• Powerful monolithic body diode with low forward voltage
   designed for soft commutation only
• Very tight parameter distribution
• High ruggedness, temperature stable behavior
• Low VCEsat
• Easy parallel switching capability due to positive temperature
   coefficient in VCEsat
• Low EMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
   //www.infineon.com/igbt/


APPLICATIONs:
• Induction cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications


零件编号
产品描述 (功能)
PDF
生产厂家
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies

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