IHW40N60T 数据手册 ( 数据表 ) - Infineon Technologies
零件编号
IHW40N60T
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Infineon Technologies
Features:
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/
APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications
零件编号
产品描述 (功能)
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生产厂家
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode ( Rev : 2006 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode ( Rev : 2006 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode ( Rev : 2008 )
Infineon Technologies
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2007 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2007 )
Infineon Technologies
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