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IPD60R600P7S 数据手册 ( 数据表 ) - Infineon Technologies

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零件编号
IPD60R600P7S

Other PDF
  2021  

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page
14 Pages

File Size
780.4 kB

生产厂家
Infineon
Infineon Technologies Infineon

600V CoolMOS™ P7 Power Transistor

The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS P6 series.


FEATUREs
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
   commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness > 2kV(HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
   low RDS(on)*A (below 1Ohm*mm²)
• Product vaildation acc. JEDEC Standard


Benefits
• Ease of use and fast design-in through low ringing tendency and usage
   across PFC and PWM stages
• Simplified thermal management due to low switching and conduction
   losses
• Increased power density solutions enabled by using products with
   smaller footprint and higher manufacturing quality due to >2kV ESD
   protection
• Suitable for a wide variety of applications and power ranges

Potential applications
   PFC stages, hard switching PWM stages and resonant switching stages
   fore.g. PC Silverbox, Adapter,LCD & PDP TV, Lighting, Server, Telecom
   and UPS.


零件编号
产品描述 (功能)
PDF
生产厂家
600V CoolMOS P7 Power Transistor
Infineon Technologies
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