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IRF240 数据手册 ( 数据表 ) - New Jersey Semiconductor

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零件编号
IRF240

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生产厂家
NJSEMI
New Jersey Semiconductor NJSEMI

Part Number BVDSS     RDS(on)     ID
IRF240      200V      0.18Ω            18A

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.


FEATUREs:
● Repetitive Avalanche Ratings
● Dynamic dv/dt Rating
● Hermetically Sealed
● Simple Drive Requirements
● Ease of Paralleling

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零件编号
产品描述 (功能)
PDF
生产厂家
200V, N-CHANNEL THRU-HOLE (TO-204AA/AE)
International Rectifier
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
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200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
International Rectifier
HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE)
International Rectifier
200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE)
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500V, N-CHANNEL HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE) ( Rev : 2001 )
International Rectifier
500V, N-CHANNEL HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE)
International Rectifier
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
International Rectifier
500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
International Rectifier

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