IRF450 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
IRF450
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3 Pages
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127.6 kB
生产厂家
New Jersey Semiconductor
FEATURES
• Low Rds(on) ) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polysillcon gate cell structure
• Low Input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High voltage)
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