General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
FEATUREs
• 3.3A, 200V, RDS(on)= 1.5Ω@VGS= 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability