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IRF610PBF 数据手册 ( 数据表 ) - Vishay Semiconductors

IRF610PBF image

零件编号
IRF610PBF

产品描述 (功能)

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page
9 Pages

File Size
1.5 MB

生产厂家
VBSEMI
Vishay Semiconductors VBSEMI

FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC


APPLICATIONS
• Primary Side Switch


零件编号
产品描述 (功能)
PDF
生产厂家
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
Unspecified
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd

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