Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

FEATUREs
● Integrated half-bridge package
● Reduces the part count by half
● Facilitates better PCB layout
● Key parameters optimized for Class-D audio amplifier applications
● Low RDS(ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low Qrr for better THD and lower EMI
● Can delivery up to 100W per channel into 6Ω load in full-bridge configuration amplifier
● Lead-free package