• DESCRITION
• Synchronous Rectification
• FEATURES
• Static drain-source on-resistance:
RDS(on) ≤2mΩ
• Enhancement mode:
Vth =2.1 to 3.7V (VDS=VGS, ID=250μ A)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation