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IRFR9210 数据手册 ( 数据表 ) - International Rectifier

IRFR9210 image

零件编号
IRFR9210

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6 Pages

File Size
171.6 kB

生产厂家
IR
International Rectifier IR

DESCRIPTION
The HEXFET technology is the key to International Rectifiers advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210)
• Straight Lead (IRFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching

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零件编号
产品描述 (功能)
PDF
生产厂家
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
International Rectifier
HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
International Rectifier
HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
International Rectifier
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
Vishay Semiconductors
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
International Rectifier
HEXFET® Power MOSFET. VDSS = -250V RDS(on) = 3.0 Ω ID = -2.7A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
International Rectifier

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