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IRFU320 数据手册 ( 数据表 ) - International Rectifier

IRFR320 image

零件编号
IRFU320

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page
6 Pages

File Size
177 kB

生产厂家
IR
International Rectifier IR

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR320)
• Straight lead (IRFU320)
• Available in tape and reel
• Fast switching
• Ease of paralleling

Page Link's: 1  2  3  4  5  6 

零件编号
产品描述 (功能)
PDF
生产厂家
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
International Rectifier
HEXFET Power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ω, ID = -3.1A
International Rectifier
HEXFET® Power MOSFET (Vdss=400V/ Rds(on)=0.55Ω / Id=5.4A)
International Rectifier
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier

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