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IRFY430C 数据手册 ( 数据表 ) - International Rectifier

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零件编号
IRFY430C

Other PDF
  2001  

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7 Pages

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202.5 kB

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IR
International Rectifier IR

POWER MOSFET THRU-HOLE (TO-257AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.


FEATUREs:
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets
■ Ideally Suited For Space Level Applications

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生产厂家
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA) ( Rev : 2010 )
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
International Rectifier

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