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IRG4BC30FD1PBF(2004) 数据手册 ( 数据表 ) - International Rectifier

IRG4BC30FD1PBF image

零件编号
IRG4BC30FD1PBF

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11 Pages

File Size
411.8 kB

生产厂家
IR
International Rectifier IR

Features
• Fast: Optimized for medium operating frequencies 
   (1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter 
   parameter distribution and higher efficiency than 
   Generation 3
• IGBT co-packaged with Hyperfast FRED diodes for ultra low
   recovery characteristics.
• Industry standard TO-247AB package
• Lead-Free


Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• FRED diodes optimized for performance with IGBTs. 
   Minimized recovery characteristics require less / no 
   snubbing




零件编号
产品描述 (功能)
PDF
生产厂家
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE ( Rev : 2004 )
International Rectifier
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