INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

FEATUREs
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• UltraFast Speed Operation 8KHz - 40KHz,
   > 200KHz in Resonent Mode
• High Operating Frequency
• Switching-loss Rating includes all "tail" Losses
• Ceramic Eyelets

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
   IR A&D Generation 3 IGBTs