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IRGP4266DPBF 数据手册 ( 数据表 ) - Infineon Technologies

IRGP4266DPBF image

零件编号
IRGP4266DPBF

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page
12 Pages

File Size
855.7 kB

生产厂家
Infineon
Infineon Technologies Infineon

Features
   Low VCE(ON) and Switching Losses
   5.5µs Short Circuit SOA
   Square RBSOA
   Maximum Junction Temperature 175°C
   Positive VCE (ON) Temperature Co-efficient


Benefits
   High Efficiency in a Wide Range of Applications
   Increased Reliability
   Excellent Current Sharing in Parallel Operation
   Rugged Transient Performance


APPLICATIONs
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding


零件编号
产品描述 (功能)
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生产厂家
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode ( Rev : 2013 )
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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