Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

• Ultra Low On-Resistance
• N-Channel MOSFET
• SOT-23 Footprint
• Low Profile (<1.1mm)
• Available in Tape and Reel
• Fast Switching