datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Integrated Silicon Solution  >>> IS43R32800B PDF

IS43R32800B 数据手册 ( 数据表 ) - Integrated Silicon Solution

IS43R32800B image

零件编号
IS43R32800B

Other PDF
  no available.

PDF
DOWNLOAD     

page
39 Pages

File Size
376.5 kB

生产厂家
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION:
IS43R32800B is a 4-bank x 2,097,152-word x32bit Double Data Rate Synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The IS43R32800B achieves very high speed clock rate up to 200 MHz. It is packaged in 144-ball FBGA.


FEATURES
• Vdd/Vddq=2.5V+0.2V (-5, -6, -75)
• Double data rate architecture; two data transfers
   per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/
   received with data
• Differential clock input (CLK and /CLK)
• DLL aligns DQ and DQS transitions with CLK
   transitions edges of DQS
• Commands entered on each positive CLK edge;
• Data and data mask referenced to both edges of
   DQS
• 4 bank operation controlled by BA0, BA1 (Bank
   Address)
• /CAS latency –2.0/2.5/3.0 (programmable)
• Burst length - 2/4/8 (programmable)
• Burst type - Sequential/ Interleave (programmable)
• Auto precharge / All bank precharge controlled
   by A8
• 4096 refresh cycles/ 64ms (4 banks concurrent
   refresh)
• Auto refresh and Self refresh
• Row address A0-11/ Column address A0-7, A9-
   SSTL_2 Interface
• Package 144-ball FBGA
• Available in Industrial Temperature
• Temperature Range:
   Commercial (0°C to +70°C)
   Industrial (-40°C to +85°C)


Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]