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IS61LV25616L 数据手册 ( 数据表 ) - Integrated Silicon Solution

IS61LV25616L image

零件编号
IS61LV25616L

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11 Pages

File Size
59.2 kB

生产厂家
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS61LV25616L is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.


FEATURES
• High-speed access time:
  — 10, 12, and 15 ns
• Low Active Power
  — Less than 90mA (typ.) Active Current
• Low standby power:
  — Less than 1 mA (typ.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available

 

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零件编号
产品描述 (功能)
PDF
生产厂家
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY
Integrated Silicon Solution
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
1M x 16  HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY ( Rev : 2012 )
Integrated Silicon Solution

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