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IS62C256 数据手册 ( 数据表 ) - Integrated Silicon Solution

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零件编号
IS62C256

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ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology.
WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Select (CS) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in plastic SOP or TSOP (Type I) package.


FEATURES
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
   — 250 µW (typical) CMOS standby
   — 28 mW (typical) TTL standby
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V power supply

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零件编号
产品描述 (功能)
PDF
生产厂家
32K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
32K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
32K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
32K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
LOW POWER 32K x 8 STATIC CMOS RAM
Performance Semiconductor
32K X 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
LOW POWER 32K x 8 STATIC CMOS RAM
Performance Semiconductor
LOW POWER 32K x 8 STATIC CMOS RAM
Unspecified
32K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
32K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology

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