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IS62LV12816L-10BI 数据手册 ( 数据表 ) - Integrated Silicon Solution

IS62LV12816LL image

零件编号
IS62LV12816L-10BI

产品描述 (功能)

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10 Pages

File Size
69.5 kB

生产厂家
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.


FEATURES
• High-speed access time: 55, 70, 100 ns
• CMOS low power operation
    – 120 mW (typical) operating
    – 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.5V-3.0V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and 48-pin mini BGA

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零件编号
产品描述 (功能)
PDF
生产厂家
128K x 16 CMOS STATIC RAM
Integrated Silicon Solution
128K x 16 CMOS STATIC RAM
Integrated Silicon Solution
128K x 16 Static RAM
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128K x 16 Static RAM
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128K x 16 Static RAM
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128K x 16 Static RAM
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128K x 16 CMOS 3.3V Static RAM
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128K X 16 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
128K x 16 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 16 HIGH-SPEED CMOS STATIC RAM
Winbond

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