Features
● Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
● Low drain to tab capacitance(<35pF)
● Low RDS (on)
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Fast intrinsic Rectifier
APPLICATIONs
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control
Advantages
● Easy assembly: no screws or isolation foils required
● Space savings
● High power density
● Low collector capacitance to ground (low EMI)