N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg

FEATUREs
• Low gate charge
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier

Advantages
• Easy to mount
• Space savings
• High power density