N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Electrically Isolated Back Surface

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
   - high power dissipation
   - isolated mounting surface
   - 2500 V electrical isolation
• 3rd generation CoolMOS™ 1) power MOSFET
   - high blocking capability
   - lowest resistance
   - avalanche rated for unclamped inductive switching (UIS)
• Low thermal resistance due to reduced chip thickness
• Low drain to tab capacitance (<30 pF)

APPLICATIONs
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating

Advantages
• Easy assembly: no screws or isolation foils required
• Space savings
• High power density