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J557 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SJ557 image

零件编号
J557

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8 Pages

File Size
49.4 kB

生产厂家
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ557 is a switching device which can be driven directly by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
   RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
   RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
   RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)


零件编号
产品描述 (功能)
PDF
生产厂家
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology

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