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K12A60D 数据手册 ( 数据表 ) - Toshiba

K12A60D image

零件编号

K12A60D

产品描述 (功能)

Silicon N Channel MOS Type (π -MOSⅦ ) Field Effect Transistor

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6 Pages

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175.1 kB

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Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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零件编号

产品描述 (功能)

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生产厂家

Silicon N-Channel MOS Type Field Effect Transistor

Toshiba

SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR ( Rev : 1998 )

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Silicon N-Channel MOS Type Field Effect Transistor ( Rev : 2006 )

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Silicon N Channel MOS Type Field Effect Transistor

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SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

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N-channel MOS Type Silicon Field Effect Transistor

SANYO -> Panasonic

Field Effect Transistor Silicon N-Channel MOS Type

Unspecified

Field Effect Transistor Silicon N Channel MOS Type

Toshiba

Field Effect Transistor Silicon N Channel MOS Type

Toshiba

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