datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Samsung  >>> K1S161611A PDF

K1S161611A 数据手册 ( 数据表 ) - Samsung

DS_K1S161611A image

零件编号
K1S161611A

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
126.5 kB

生产厂家
Samsung
Samsung Samsung

1M x 16 bit Uni-Transistor CMOS RAM

GENERAL DESCRIPTION
The K1S161611A is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.


FEATURES
• Process Technology: CMOS
• Organization: 1M x16 bit
• Power Supply Voltage: 2.7V~3.1V
• Three State Outputs
• Compatible with Low Power SRAM
• Dual Chip selection support
• Package Type: 48-FBGA-6.00x7.00

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
4K BIT STATIC RANDOM ACCESS MEMORY
Motorola => Freescale
256-BIT STATIC RANDOM ACCESS MEMORY
Motorola => Freescale
16,384-BIT DYNAMIC RANDOM ACCESS MEMORY
Motorola => Freescale
262,144–Bit Dynamic Random Access Memory (DRAM)
NTE Electronics
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY
Fujitsu
CMOS 1024-BIT STATIC RANDOM ACCESS MEMORY
Motorola => Freescale
1024-wordX4-bit Static Random Access MEMORY
Hitachi -> Renesas Electronics
MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
Fujitsu
64-BIT RANDOM ACCESS MEMORY (OPEN COLLECTOR)
Unspecified
32K x 8 Bit Static Random Access Memory
Motorola => Freescale

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]