K50A04K3 数据手册 ( 数据表 ) - NXP Semiconductors.
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K50A04K3
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NXP Semiconductors.
MOSFETs Silicon N-channel MOS (U-MOSIV)
FEATUREs
(1) Low drain-source on-resistance: RDS(ON)= 2.7 mΩ(typ.) (VGS= 10 V)
(2) Low leakage current: IDSS= 10 µA (max) (VDS= 40 V)
(3) Enhancement mode: Vth= 3.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
APPLICATIONs
• Automotive
• Motor Drivers
• Switching Voltage Regulators
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