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K6R1008C1A-I 数据手册 ( 数据表 ) - Samsung

K6R1008C1A image

零件编号
K6R1008C1A-I

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page
8 Pages

File Size
129 kB

生产厂家
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6R1008C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1A uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008C1A is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward.


FEATURES
• Fast Access Time 12, 15, 20ns(Max.)
• Low Power Dissipation
   Standby (TTL) : 25mA(Max.)
                 (CMOS) : 8mA(Max.)
   Operating K6R1008C1A-12 : 170mA(Max.)
                    K6R1008C1A-15 : 165mA(Max.)
                    K6R1008C1A-20 : 160mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
   - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
   K6R1008C1A-J : 32-SOJ-400
   K6R1008C1A-T: 32-TSOP2-400CF

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零件编号
产品描述 (功能)
PDF
生产厂家
128K x 8 Bit High-Speed CMOS Static RAM
Samsung
128K x 8 Bit High-Speed CMOS Static RAM
Samsung
128K x 8 Bit High-Speed CMOS Static RAM
Samsung
128K x 8 Bit High-Speed CMOS Static RAM
Samsung
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc

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