GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.

FEATURES
•Voltage Supply
- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
•Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
•Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
•Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
- Serial Access : 30ns(Min.)
•Memory Cell : 2bit / Memory Cell
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
•Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
•Command/Address/Data Multiplexed I/O Port
•Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
•Command Register Operation
•Unique ID for Copyright Protection
•Package :
- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
   48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)
- K9G4G08U0A-ICB0/IIB0
   52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9L8G08U1A-ICB0/IIB0
   52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9G4G08B0A : MCP(TBD)