KTD998 数据手册 ( 数据表 ) - Inchange Semiconductor
零件编号
KTD998
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
• Good Linearity of hFE
• Complement to Type KTB778
APPLICATIONS
• High power amplifier applications
• Recommend for 45-50W audio frequency amplifier
output stage applications
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