Overview
The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.

FEATUREs
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 120 and 150 ns
• Low power dissipation
    — Operating current (read): 12 mA (maximum)
    — Standby current: 15 µA (maximum)
• Highly reliable read/write
    —Erase/write cycles: 104/103 cycles
    —Data retention time: 10 years
• Address and data latches
• Fast page rewrite operation
    — 128 bytes per page
    — Byte/page rewrite time: 5 ms (typical)
    — Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
    — Toggle bit
    — Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package
    SOP 32-pin (525 mil) plastic package:LE28CV1001M
    TSOP 32-pin (8 × 20 mm) plastic package:LE28CV1001T