Product Description
The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYOs proprietary, high performance FlashTechnology. The LE28DW1621T writes with a 3.0-volt-only power supply.

FEATURES:
• Single 3.0-Volt Read and Write Operations
• Separate Memory Banks by Address Space
   – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash
   – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash
   – Simultaneous Read and Write Capability
• Superior Reliability
   – Endurance: 100,000 Cycles (Erase Verify Mode)
                          10,000 Cycles
   – Data Retention: 10 years
• Low Power Consumption
   – Active Current, Read: 10 mA (typical)
   – Active Current, Read & Write: 30 mA (typical)
   – Standby Current: 5µA (typical)
   – Auto Low Power Mode Current: 5µA (typical)
• Fast Write Operation
   – Chip Erase + Program: 15 sec (typical)
   – Block Erase + Program: 500 ms (typical)
   – Sector Erase + Program: 30 ms (typical)
• Fixed Erase, Program, Write Times
   – Does not change after cycling
• Read Access Time
   – 80 ns
• Latched Address and Data
• End of Write Detection
   – Toggle Bit / Data # Polling / RY/BY#
• Write Protection by WP# pin
• Erase Verify Mode
• Flash Bank: Two Small Erase Element Sizes
   – 1K Words per Sector or 32K Words per Block
   – Erase either element before Word Program
• CMOS I/O Compatibility
• Packages Available
   – 48-Pin TSOP (12mm x 20mm)
• Continuous Hardware and Software Data
   Protection (SDP)