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LE28F4001M 数据手册 ( 数据表 ) - SANYO -> Panasonic

LE28F4001M image

零件编号
LE28F4001M

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14 Pages

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211.3 kB

生产厂家
SANYO
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Overview
The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes) erase function for fast data rewriting.


FEATUREs
• Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
• Read and write operation from a 5 V single-voltage power supply
• Sector erase function: 256 bytes per sector
• Fast access time: 150/200 ns
• Low power
   — Operating current (read): 25 mA (maximum)
   — Standby current: 20 µA (maximum)
• Highly reliable read and write operations
   — Sector write cycles: 104 cycles
   — Data retention time: 10 years
• Address and data latches
• Self-timer erase and programming
• Byte programming time: 35 µs (maximum)
• Write complete detection: Toggle bit and data polling
• Hardware and software data protection
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard
• Packages
   SOP 32-pin (525 mil) plastic package :LE28F4001M
   TSOP 40-pin (10 × 14 mm) plastic package:LE28F4001T
   TSOP 40-pin (10 × 14 mm) plastic package:LE28F4001R

 

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零件编号
产品描述 (功能)
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生产厂家
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1 MEG (131072 words x 8 bits) Pseudo-SRAM
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8 MEG (1048576 words × 8 bits) Mask ROM Internal Clocked Silicon Gate
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4MEG (52488 × 8 Bits) Flash Memory
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1 MEG (131072 words× 8 bits) Mask ROM Internal Clocked Silicon Gate
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2 MEG (262144 words ×8 bits) Mask ROM Internal Clocked Silicon Gate
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