GaAs Infrared Light Emitting Diode
For optical control systems
FEATUREs
● High-power output, high-efficiency : PO = 10 mW (typ.)
● Wide directivity, matched for external optical systems : θ = 100 deg.
● Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
● Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
● High-speed modulation