GENERAL DESCRIPTION
The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual banks operation
• MRS cycle with address key programs
   - CAS Latency (2 & 3 )
   - Burst Length (1, 2, 4, 8 & full page)
   - Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 32ms refresh period (2K cycle)