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M66282FP 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC

M66282FP image

零件编号
M66282FP

产品描述 (功能)

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12 Pages

File Size
81.7 kB

生产厂家
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 8192 words x 8 bits.
The M66282FP, performing reading and writing operations at different cycles independently and asynchronously, is optimal for buffer memory to be used between equipment of different data processing speeds.


FEATURES
• Memory configuration 8192 words x 8 bits (dynamic memory)
• High speed cycle 25 ns (Min.)
• High speed access 18 ns (Max.)
• Output hold 3 ns (Min.)
• Reading and writing operations can be completely carried out independently and asynchronously.
• Variable length delay bit
• Input/output TTL direct connection allowable
• Output 3 states


APPLICATION
• Digital copying machine, laser beam printer, high speed facsimile, etc.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
8192 x 8-BIT LINE MEMORY
MITSUBISHI ELECTRIC
8192 × 8-Bit Line Memory
Renesas Electronics
8192 × 8-Bit Line Memory
Renesas Electronics
8192 × 10-Bit Line Memory (FIFO)
Renesas Electronics
8192 × 10-BIT LINE MEMORY (FIFO)
MITSUBISHI ELECTRIC
5120 x 8-BIT LINE MEMORY
MITSUBISHI ELECTRIC
8192 x 8-Bit CMOS EEPROM
NEC => Renesas Technology
5120 x 8-BIT x 2 LINE MEMORY
MITSUBISHI ELECTRIC
5,048-Word x 8-Bit Line Memory
Oki Electric Industry
1152 x 8-BIT LINE MEMORY (FIFO)
Renesas Electronics

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