Description
M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide anode enhanced, SPST PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode resistance than conventional GaAs processes. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility.

FEATUREs
■ Ultra Broad Bandwidth: 50 MHz to 50 GHz
■ Functional Bandwidth : 50 MHz to 70 GHz
■ Dual shunt diode configuration
■ 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz
■ Low Current consumption:
   -5 V for Low Loss State
   +10 mA for Isolation State
■ M/A-COM’s unique patent pending AlGaAs
   hetero-junction anode technology
■ Silicon Nitride Passivation
■ Polymide Scratch protection