Description and Applications
The MADS-001317-1500 single is a gallium arsenide flip chip Schottky barrier diode. This device is fabricated on OMCVD epitaxial material using a process designed for high device uniformity and extremely low parasitics. This diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coating prevents damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. This device with can be attached with solder or conductive epoxy. The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors.

FEATUREs
• Usable Past 80 GHz
• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Lead Free (RoHS Compliant)
• Designed for Easy Circuit Insertion
• Available in Pocket Tape and Reel
• Can be Mounted with Solder or Conductive
   Epoxy