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MAX2611EUS(1996) 数据手册 ( 数据表 ) - Maxim Integrated

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零件编号
MAX2611EUS

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General Description
The MAX2611 is a low-voltage, low-noise amplifier for use from DC to microwave frequencies. Operating from a single +5V supply, it has a 3dB bandwidth of 1100MHz. The MAX2611’s low noise figure and high drive capability make it ideal for a variety of transmit, receive, and buffer applications.
In a typical application, the only external components needed are input and output blocking capacitors and a VCC series resistor. To improve gain and output power, an RF choke can be added in series to the bias resistor.
The MAX2611 comes in a 4-pin SOT143 package, requiring minimal board space.


FEATUREs
♦ Single +5V Supply Operation
♦ 3dB Bandwidth: DC to 1100MHz
♦ High Gain: 18dB at 500MHz
♦ Low Noise Figure: 3.5dB at 500MHz
♦ High Drive Capability: +3dBm at 16mA ID
♦ Ultra-Small SOT143 Package


APPLICATIONs
   Satellite Receivers
   TV Tuners
   Wireless Local Loops
   ISM Radios
   Global Positioning Systems
   Wireless Local-Area Networks
   Land Mobile Radios
   Set-Top Boxes

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DC-to-Microwave, +5V Low-Noise Amplifier
Maxim Integrated
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology

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