DESCRIPTIONS
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

FEATURES
• Bit configuration : 131,072 words × 8 bits
• Read/write endurance : 1010 times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : − 40 °C to + 85 °C
• Data retention : 10 years ( + 55 °C)
• Package : 48-pin plastic TSOP (1)