. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,
high- frequency inverters, free wheeling diodes, and polarity protection diodes.

• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard-Ring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• High Surge Capacity

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B1100