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MBRA120ET3 数据手册 ( 数据表 ) - ON Semiconductor

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零件编号
MBRA120ET3

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4 Pages

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ONSEMI
ON Semiconductor ONSEMI

Surface Mount Schottky Power Rectifier
SMA Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Optimized for Low Leakage Current

Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
                       Human Body Model, 3B (>8000 V)
• Marking: B1E2


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