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MC-4R64FKE8D-653 数据手册 ( 数据表 ) - Elpida Memory, Inc

MC-4R64FKE8D image

零件编号
MC-4R64FKE8D-653

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14 Pages

File Size
127.4 kB

生产厂家
Elpida
Elpida Memory, Inc Elpida

Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.
MC-4R64FKE8D modules consists of two 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.


FEATUREs
• 184 edge connector pads with 1mm pad spacing
• 64 MB Direct RDRAM storage
• Each RDRAM® has 32 banks, for 64 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support

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零件编号
产品描述 (功能)
PDF
生产厂家
Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 18-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)
Elpida Memory, Inc
Direct Rambus™ DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus™ DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
NEC => Renesas Technology
Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)
Elpida Memory, Inc
Direct Rambus™ DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
NEC => Renesas Technology
Direct Rambus DRAM SO-RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)
Elpida Memory, Inc
Direct Rambus DRAM SO-RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)
Elpida Memory, Inc

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