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MC74VHC1G01 数据手册 ( 数据表 ) - Leshan Radio Company

MC74VHC1G01 image

零件编号
MC74VHC1G01

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Leshan-Radio
Leshan Radio Company Leshan-Radio

The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level. This allows the MC74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply.
The MC74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16

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零件编号
产品描述 (功能)
PDF
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