MGF1423B 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
零件编号
MGF1423B
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5 Pages
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers.
FEATURES
● High linear power gain
GLP = 11 dB (TYP.) @ f = 12 GHz
● High output power at 1 dB gain compression
P1dB = 13dBm (TYP.) @ f = 12 GHz
● High reliability and stability
APPLICATION
S to Ku band amplifiers
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