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MGFC41V3642_04 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC

MGFC41V3642 image

零件编号
MGFC41V3642_04

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2 Pages

File Size
216 kB

生产厂家
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.


FEATURES
    Internally matched to 50ohm system
    High output power
        P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
    High power gain
        GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
    High power added efficiency
        Eadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz
    Low Distortion[Item-51]
        IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.


APPLICATION
    item 01 : 3.6 - 4.2 GHz band power amplifier
    item 51 : 3.6 - 4.2 GHz band digital radio communication

Page Link's: 1  2 

零件编号
产品描述 (功能)
PDF
生产厂家
3.6 ~ 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
Mitsumi
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7~4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC

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